陈继新，1976年12月生，tyc234cc 太阳成集团首席教授、电磁场与微波工程系主任。1998年毕业于tyc234cc 太阳成集团无线电工程系获学士学位，2002年和2006年毕业于tyc234cc 太阳成集团分别获硕士和博士学位。主要研究方向为微波毫米波芯片与系统，发表/合作发表论文100余篇、发明专利20多项。曾任2021年全国微波毫米波会议技术委员会主席、IEEE RFIT2019 TPC主席等。2016年获首届Keysight Early Career Professor Award以及国家自然科学二等奖。2021年入选教育部长江学者奖励计划。
电子邮箱： jxchen@seu.edu.cn
学习经历： |
2002/04 – 2006/01：tyc234cc 太阳成集团，博士 2000/09 – 2002/03：tyc234cc 太阳成集团，硕士 1994/09 – 1998/08：tyc234cc 太阳成集团，本科 |
工作经历: |
2021/01 – 至今：tyc234cc 太阳成集团首席教授 2016/10 – 至今：电磁场与微波工程系主任 2006/04 – 至今：tyc234cc 太阳成集团，tyc234cc 太阳成集团，讲师、副教授、教授 1998/09 – 2000/08：tyc234cc 太阳成集团，无线电工程系，助研 |
教授课程： |
1. 本科生课程：微波器件原理和芯片设计 2. 研究生课程：微波毫米波电路集成新技术 |
研究方向： |
1. 毫米波亚毫米波理论与技术 2. 无线通信系统中的射频与天线技术 3. 微波毫米波电路与系统 |
论文情况： |
近年主要论文 [1] Jiayang Yu, Jixin Chen et al., A 211-to-263-GHz Dual- LC -Tank-Based Broadband Power Amplifier With 14.7-dBm P SAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS,IEEE Journal of Solid-State Circuits. Early Access Article. 2022 [2] Huanbo Li, Jixin Chen et al., W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication, IEEE Journal of Solid-State Circuits, vol. 57, no. 9, 2022, pp. 2685-2701 [3] Peigen Zhou, Jixin Chen et al., A −28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11aj, IEEE Journal of Solid-State Circuits, vol. 56, no. 10, 2021, pp. 3077-3093 [4] Jiayang, Yu, Jixin Chen et al., A 300-GHz Transmitter Front End With -4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm SiGe BiCMOS Technology, IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 11, 2021, pp. 4925-4936 [5]. Zekun. Li, Jixin Chen et al., A 24-30-GHz TRX Front-End With High Linearity and Load-Variation Insensitivity for mm-Wave 5G in 0.13-μm SiGe BiCMOS, IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 10, 2021, pp. 4561-4575 [6] Peigen Zhou, Jixin Chen et al., “A 150- GHz Transmitters With 12-dBm Peak Output Power Using 130-nm SiGe:C BiCMOS Process” IEEE Transactions on Microwave Theory and Techniques, vol. 68, no. 7, 2020, pp. 3056-3067 [7] Huanbo Li, Jixin Chen et al., “A 250- GHz Differential SiGe Amplifier With 21.5-dB Gain for Sub-THz Transmitters,” IEEE Transactions on Terahertz Science and Technology, vol. 10, no. 6, 2020, pp. 624-633 [8] Peigen Zhou, Jixin Chen et al., “A 273.5-312-GHz Signal Source With 2.3 dBm Peak Output Power in a 130-nm SiGe BiCMOS Process” IEEE Transactions on Terahertz Science and Technology, vol. 10, no. 3, 2020, pp. 260-270 [9] Peigen Zhou, Jixin Chen et al., An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range, in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 69, no. 3, 2022, pp. 1041-1050 [10] Chao Chen, Jixin Chen, Wei Hong, Differentially Fed Dual-Polarized 2-D Multibeam Dielectric Resonator Antenna Array Based on Printed Ridge Gap Waveguide, in IEEE Transactions on Antennas and Propagation, vol. 70, no. 9, 2022, pp. 7967-7977 [11] Haoyi Dong, Jixin Chen, et al., A Low-Loss Fan-Out Wafer-Level Package With a Novel Redistribution Layer Pattern and Its Measurement Methodology for Millimeter-Wave Application, in IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 10, no. 7, 2020, pp. 1073-1078 [12] Huanbo Li, Jixin Chen et al., A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS, in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 10, 2020, pp. 1839-1843 [13] Huanbo Li, Jixin Chen et al., A High-Linearity Adaptive-Bias SiGe Power Amplifier for 5G Communication, in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 68, no. 8, 2021, pp. 2770-2774 [14] Long Wang, Jixin Chen et al., A Variable Gain Power Amplifier Based on Switched-Capacitor Array With Stable Linearity, in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 69, no. 2, 2022, pp. 289-293 [15] Peigen Zhou, Jixin Chen et al., A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology, in IEEE Solid-State Circuits Letters, vol. 4, 2021, pp. 44-47 [16] Zekun. Li,, Jixin Chen, et al., A 220-GHz Power Amplifier With 22.5-dB Gain and 9-dBm Psat in 130-nm SiGe, in IEEE Microwave and Wireless Components Letters, vol. 31, no. 10, 2021, pp. 1166-1169 [17] H. Li, J. Chen, D. Hou, Z. Li, P. Zhou and W. Hong, A 230-GHz SiGe Amplifier With 21.8-dB Gain and 3-dBm Output Power for Sub-THz Receivers, in IEEE Microwave and Wireless Components Letters, vol. 31, no. 8, 2021, pp. 1004-1007 [18] Zekun. Li, Jixin Chen et al., A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS, 2022 IEEE Custom Integrated Circuits Conference (CICC), Newport Beach, CA, USA, 2022, pp. 1-2. [19] Huanbo Li, Jixin Chen et al., A 94GHz Scalable 2 × 2 Phased-Array Receiver in SiGe BiCMOS for High Data-Rate Communication, 2021 IEEE Custom Integrated Circuits Conference (CICC), Austin, TX, USA, 2021, pp. 1-2. [20] Jiayang, Yu, Jixin Chen et al., A 212–260 GHz Broadband Frequency Multiplier Chain (×4) in 130-nm BiCMOS Technology, 2021 IEEE MTT-S International Microwave Symposium (IMS), Atlanta, GA, USA, 2021, pp. 454-457. [21] Peigen Zhou, Jixin Chen et al., A 64-QAM 45-GHz SiGe Transceiver for IEEE 802.11aj, 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Los Angeles, CA, USA, 2020, pp. 167-170. [22] Peigen Zhou, Jixin Chen et al., A 77-GHz Fully Integrated Power Amplifier for Automotive Radar Application in 40-nm CMOS, 2021 IEEE MTT-S International Wireless Symposium (IWS), Nanjing, China, 2021, pp. 1-3. [23] Peigen Zhou, Jixin Chen et al., Analysis and Design of D-band High Output Power Signal Sources in 130-nm SiGe BiCMOS Process, 2021 IEEE MTT-S International Wireless Symposium (IWS), Nanjing, China, 2021, pp. 1-3. [24] Zekun. Li, Jixin Chen et al., A Wide-Bandwidth W-Band LNA in GaAs 0.1 μm pHEMT Technology, 2020 IEEE MTT-S International Wireless Symposium (IWS), Shanghai, China, 2020, pp. 1-3.
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